STE180NE10(1999) 查看數據表（PDF） - STMicroelectronics

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STE180NE10
(Rev.:1999)

N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET™ POWER MOSFET

STMicroelectronics 

STE180NE10

THERMAL DATA

Rthj-case

Rthc-h

Thermal Resistance Junction-case

Thermal Resistance Case-heatsink With conductive

Grease Applied

Max

Max

0.347

0.05

oC/W

oC/W

AVALANCHE CHARACTERISTICS

Symbo l

IAR

EAS

P a ra met er

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

Single Pulse Avalanche Energy

(starting Tj = 25 oC, ID = IAR, VDD = 25 V)

Max Value

60

720

Unit

A

mJ

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF

Symbo l

V (BR)D SS

IDSS

IGSS

P ar am et e r

Test Conditions

Dr ain- s our c e

Breakdown Voltage

ID = 1 mA VGS = 0

Zero Gate Voltage

VDS = Max Rat ing

Drain Current (VGS = 0) VDS = Max Rat ing Tc = 125 oC

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

Min.

100

Typ.

Max.

Unit

V

4

µA

40

µA

± 400 nA

ON (∗)

Symbo l

VGS(th)

RDS(on)

ID(o n)

P ar am et e r

Test Conditions

Gat e Threshold Voltage VDS = VGS ID = 1 mA

Static Drain-source On VGS = 10 V ID = 90 A

Resistance

On State Drain Current VDS > ID(o n) x RDS(on )max

VGS = 10 V

Min.

2

Typ.

3

4.5

Max.

4

6

Unit

V

mΩ

180

A

DYNAMIC

Symbo l

gfs (∗)

Ciss

Coss

Crss

P ar am et e r

Forward

Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(o n) x RDS(on )ma x ID = 80 A

Min.

30

Typ.

Max.

Unit

S

VDS = 25 V f = 1 MHz VGS = 0

21

nF

2.5

nF

0.9

nF

2/8

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