STE180NE10 查看數據表（PDF） - STMicroelectronics
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STE180NE10 Datasheet PDF : 12 Pages
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STE180NE10
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM (1)
PTOT
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20kΩ)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at
TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
VISO Insulation withstand voltage (AC-RMS)
Tj
Operating junction temperature
Tstg storage temperature
1. Pulse width limited by safe operating area
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche Current, Repetitive or Not-
IAR
Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS (starting Tj = 25 °C, ID = IAR,
VDD = 25 V)
Electrical ratings
Value
100
100
± 20
180
119
360
360
2.88
2500
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
°C
0.37
°C/W
Max value
Unit
60
A
720
mJ
3/12
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