STP10NB60SFP 查看數據表（PDF） - STMicroelectronics

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STP10NB60SFP

N-CHANNEL 10A - 600V - TO-220FP PowerMesh™ IGBT

STMicroelectronics 

STGP10NB60SFP

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max

Rthj-amb Thermal Resistance Junction-ambient Max

Rthc-sink Thermal Resistance Case-sink Typ

4.7

°C/W

62.5

°C/W

0.5

°C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

VBR(CES) Collector-Emitter Break-down IC = 250 µA, VGE = 0,

600

V

Voltage

VBR(CES) Emitter Collector Break-down IC = 1 mA, VGE = 0,

20

V

Voltage

ICES

Collector cut-off Current

(VGE = 0)

VCE = Max Rating ,Tj =25 °C

VCE = Max Rating ,Tj =125 °C

10

µA

100

µA

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE = ± 20V , VCE = 0

± 100 nA

ON (1)

Symbol

VGE(th)

VCE(SAT)

Parameter

Gate Threshold Voltage

Collector-Emitter Saturation

Voltage

Test Conditions

VCE = VGE, IC = 250µA

VGE =15V, IC = 5 A, Tj= 25°C

VGE =15V, IC = 10 A, Tj= 25°C

VGE =15V, IC = 10 A, Tj= 125°C

Min.

2.5

Typ.

1.15

1.35

1.25

Max. Unit

5

V

V

1.7

V

V

DYNAMIC

Symbol

gfs

Cies

Coes

Cres

Qg

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Gate Charge

ICL

Latching Current

Test Conditions

VCE = 25 V , IC =10 A

VCE = 25V, f = 1 MHz, VGE = 0

VCE = 400V, IC = 10 A,

VGE = 15V

Vclamp= 480V, RG= 1kΩ,

Tj= 125°C

Min.

5

20

Typ.

610

65

12

33

Max. Unit

S

pF

pF

pF

nC

A

2/8

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