STB40NS15T4 查看數據表（PDF） - STMicroelectronics
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STB40NS15T4 Datasheet PDF : 13 Pages
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STB40NS15
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
150
V
VDGR
Drain-gate voltage (RGS = 20 kΩ)
150
V
VGS
Gate- source voltage
± 20
V
ID
Drain current (continuous) at TC = 25°C
40
A
ID
t(s) IDM(1)
uc Ptot
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
rod dv/dt
Peak diode recovery avalanche energy
P Tstg
Storage temperature
te Tj
Max. operating junction temperature
le 1. Pulse width limited by safe operating area.
25
160
300
2
7
-65 to 175
A
A
W
W/°C
V/ns
°C
bso Table 3. Thermal data
- O Symbol
Parameter
t(s) Rthj-case Thermal resistance junction-case max
c Rthj-amb Thermal resistance junction-ambient max
du TJ
Maximum lead temperature for soldering purpose
value
0.5
62.5
300
Unit
°C/W
°C/W
°C
Pro Table 4. Avalanche characteristics
teSymbol
Parameter
ole Avalanche current, repetitive or not-repetitive
s IAR
(pulse width limited by Tj max)
Ob Single pulse avalanche energy
Max value Unit
40
A
EAS
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
350
mJ
3/13
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