STB40NS15T4 查看數據表（PDF） - STMicroelectronics

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STB40NS15T4

N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY™ Power MOSFET

STMicroelectronics 

STB40NS15

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

40

A

160 A

VSD (2) Forward on voltage

ISD = 40A, VGS = 0

1.5 V

trr

Reverse recovery time ISD = 40A, di/dt = 100A/µs,

270

ns

Qrr

Reverse recovery charge VDD = 100V, Tj = 150°C

200

nC

IRRM Reverse recovery current (see Figure 15)

1.5

A

1. Pulse width limited by safe operating area.

Obsolete Product(s) - Obsolete Product(s) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

5/13

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