IRF630FP 查看數據表（PDF） - STMicroelectronics

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IRF630FP

N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET

STMicroelectronics 

IRF630 - IRF630FP

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=9A, VGS=0

ISD=9A,

di/dt = 100A/µs,

VDD=50V, Tj=150°C

(see Figure 16)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

9

A

36 A

1.5 V

170

ns

0.95

µC

11

A

5/14

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