STD5N20(2000) 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
STD5N20 Datasheet PDF : 8 Pages
| |||
STD5N20
N-CHANNEL 200V - 0.6Ω - 5A DPAK
MESH OVERLAY™ MOSFET
TYPE
VDSS
RDS(on)
ID
STD5N20
200 V < 0.8 Ω
5A
s TYPICAL RDS(on) = 0.6 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s ADD SUFFIX “T4” FOR OREDERING IN TAPE &
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
3
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
December 2000
Value
200
200
±20
5
3.5
20
45
0.36
5
–65 to 150
150
(1)ISD ≤5A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(**) Limited only by Maximum Temperature Allowed
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/8
Share Link: 