STD7NB20 查看數據表（PDF） - STMicroelectronics
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STD7NB20 Datasheet PDF : 10 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 100 V, ID = 5 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
VDD = 160V, ID = 10 A,
VGS = 10V
SWITCHING OFF
Symbol
Parameter
tr(Voff)
tf
tc
Off-Voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 160V, ID = 10 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 7 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 10 A, di/dt = 100A/µs
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STD7NB20 / STD7NB20-1
Min. Typ. Max. Unit
10
14
ns
15
20
ns
17
24
nC
7.5
nC
5.5
nC
Min.
Typ.
8
10
20
Max.
11
14
28
Unit
ns
ns
ns
Min. Typ. Max. Unit
7
A
28
A
1.5
V
170
ns
980
nC
11.5
A
Safe Operating Area
Thermal Impedance
3/10
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