STD8NS25 查看數據表（PDF） - STMicroelectronics
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STD8NS25 Datasheet PDF : 6 Pages
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STD8NS25
N-CHANNEL 250V - 0.38Ω - 8A DPAK
MESH OVERLAY™ MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STD8NS25
250 V < 0.45 Ω
8A
s TYPICAL RDS(on) = 0.38 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
3
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
July 2001
Value
Unit
250
V
250
V
± 20
V
8
A
5
A
32
80
0.64
5
209
–65 to 150
150
A
W
W/°C
V/ns
mJ
°C
°C
(1) ISD≤ 8A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX
(2) Starting Tj = 25°C, IAR = 50A, VDD=20 V
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