STD4NS25T4 查看數據表（PDF） - STMicroelectronics
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STD4NS25T4 Datasheet PDF : 9 Pages
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STD4NS25
N-CHANNEL 250V - 0.9Ω - 4A DPAK/IPAK
MESH OVERLAY™ MOSFET
TYPE
VDSS
RDS(on)
ID
STD4NS25
250 V < 1.1 Ω
4A
s TYPICAL RDS(on) = 0.9 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
) s 100% AVALANCHE TESTED
t(s s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
duc DESCRIPTION
ro Using the latest high voltage MESH OVERLAY™
P process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
te performance. The new patented STrip layout cou-
le pled with the Company’s proprietary edge termina-
o tion structure, makes it suitable in coverters for
s lighting applications.
) - Ob APPLICATIONS
t(s s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
c s DC-DC CONVERTERS FOR TELECOM,
du INDUSTRIAL, AND LIGHTING EQUIPMENT
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
INTERNAL SCHEMATIC DIAGRAM
lete Pro ABSOLUTE MAXIMUM RATINGS
so Symbol
Parameter
Ob VDS
Drain-source Voltage (VGS = 0)
Value
Unit
250
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
250
V
VGS
ID
ID
IDM (q)
PTOT
Gate- source Voltage
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
± 20
V
4
A
2.5
A
16
A
50
W
0.4
W/°C
dv/dt (1) Peak Diode Recovery voltage slope
5
V/ns
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(•)Pulse width limited by safe operating area
(1) ISD≤ 4A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX
February 2001
1/9
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