STD4NS25 查看數據表（PDF） - STMicroelectronics
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STD4NS25 Datasheet PDF : 9 Pages
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STD4NS25
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
2.5
Rthj-amb Thermal Resistance Junction-ambient Max
100
Rthc-sink Thermal Resistance Case-sink Typ
1.5
Tl
Maximum Lead Temperature For Soldering Purpose
275
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
4
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
120
mJ
t(s) ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
uc Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
d V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
250
V
ro Breakdown Voltage
te P IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
ole IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±100
nA
Obs ON (1)
- Symbol
t(s) VGS(th)
RDS(on)
roduc ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
2
Typ.
3
0.9
Max.
4
1.1
Unit
V
Ω
4
A
te P DYNAMIC
le Symbol
Obsogfs (1)
Parameter
Forward Transconductance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 2A
Min.
1
Typ.
3.5
Max.
Unit
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
355
pF
Coss
Output Capacitance
64
pF
Crss
Reverse Transfer
Capacitance
29.5
pF
2/9
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