STD3NB30T4 查看數據表（PDF） - STMicroelectronics
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STD3NB30T4 Datasheet PDF : 8 Pages
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STD3NB30
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 150 V ID = 3.2 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 240 V ID =3.2 A VGS = 10 V
Min.
Typ.
9
9
Max.
12
12
Unit
ns
ns
12
16
nC
7.5
nC
3
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 240 V ID = 3.2 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
10
7
15
Max.
14
10
20
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 3.2 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 3.2 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
3
Max.
4
16
Unit
A
A
1.5
V
180
ns
800
nC
9
A
Safe Operating Area
Thermal Impedance
3/8
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