STS17NF3LL(2003) 查看數據表（PDF） - STMicroelectronics

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STS17NF3LL
(Rev.:2003)

N-CHANNEL 30V - 0.0045 Ω - 17A SO-8 STripFET™ II MOSFET FOR DC-DC CONVERSION

STMicroelectronics 

STS17NF3LL

N-CHANNEL 30V - 0.0045 Ω - 17A SO-8

STripFET™ II MOSFET FOR DC-DC CONVERSION

TYPE

VDSS

RDS(on)

ID

STS17NF3LL

30 V <0.0055 Ω 17 A

s TYPICAL RDS(on) = 0.0045 Ω @ 10V

s OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V

s CONDUCTION LOSSES REDUCED

s SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power MOSFET is the

second generation of STMicroelectronis unique

"Single Feature Size™" strip-based process. The

resulting transistor shows the best trade-off

between on-resistance and gate charge. Such

features make it the best choice in high efficiency

DC-DC converters for Telecom and computer

industries.

APPLICATIONS

s DC-DC CONVERTERS FOR TELECOM AND

NOTEBOOK CPU CORE

s SYNCHRONOUS RECTIFIER

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM(•) Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

(•) Pulse width limited by safe operating area.

March 2003

.

Value

30

30

± 18

17

12

68

3.2

Unit

V

V

V

A

A

A

W

1/8

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