STS17NF3LL(2003) 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STS17NF3LL
(Rev.:2003)

N-CHANNEL 30V - 0.0045 Ω - 17A SO-8 STripFET™ II MOSFET FOR DC-DC CONVERSION

STMicroelectronics 

STS17NF3LL

THERMAL DATA

Rthj-amb

Rthj-lead

Tj

Tstg

(*)Thermal Resistance Junction-ambient

Thermal Resistance Junction-leads

Maximum Operating Junction Temperature

Storage Temperature

(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec.

Max

47

Max

16

-55 to 175

-55 to 175

°C/W

°C/W

°C

°C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

30

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 18 V

±100

nA

ON (*)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

VGS = 4.5 V

ID = 8.5 A

ID = 8.5 A

Min.

1

Typ. Max.

0.0045 0.0055

0.0055 0.007

Unit

V

Ω

Ω

DYNAMIC

Symbol

gfs (*)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS = 10 V

ID = 8.5 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

37

2160

614

98

Max.

Unit

S

pF

pF

pF

2/8

Share Link: