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STB60NF03L 查看數據表(PDF) - STMicroelectronics

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STB60NF03L Datasheet PDF : 6 Pages
1 2 3 4 5 6
STB60NF03L
THERMAL DATA
Rthj-case
R th j -a mb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature F or Soldering Purpose
1. 5
6 2. 5
3 00
oC/W
oC/W
oC
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Tc =125 oC
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 30 A
Resistance
VGS = 4. 5V ID = 30 A
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
1
60
Typ. Max.
1.5
2.5
0.008 0.01
0.0095 0.015
Unit
V
A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID =30 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
Typ.
60
Max.
Unit
S
2550
pF
630
pF
215
pF
2/6

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