STP7NC40 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
STP7NC40 Datasheet PDF : 8 Pages
| |||
STP7NC40
N-CHANNEL 400V - 0.75Ω - 6A TO-220
PowerMESH™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP7NC40
400 V
<1Ω
6A
s TYPICAL RDS(on) = 0.75Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
DESCRIPTION
The PowerMESH™II is the evolution of the first gen-
eration of MESH OVERLAY™. The layout refine-
ments introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
TO-220
3
2
1
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Value
400
400
± 30
6
4
24
100
0.8
3
–65 to 150
150
(1)ISD ≤6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
March 2001
1/8
Share Link: 