STP5K50Z 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
STP5K50Z
STMicroelectronics
STP5K50Z Datasheet PDF : 17 Pages
| |||
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On /Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
V(BR)DSS Drain-source Breakdown ID = 1 mA, VGS = 0
500
V
Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on
Static Drain-source On
Resistance
VGS = 10 V, ID = 2.2 A
1.22
1.5
Ω
Table 8: Dynamic
Symbol
Parameter
Test Conditions
gfs (1) Forward Transconductance VDS = 15 V , ID = 2.2 A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
COSS eq (3). Equivalent Output
Capacitance
VGS = 0 V, VDS = 0 to 400 V
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
VDD = 250 V, ID = 2.2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400 V, ID = 4.4 A,
VGS = 10 V
(see Figure 22)
Min.
Typ.
3.1
535
75
17
45
15
10
32
15
20
4
10
Max. Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
28
nC
nC
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
4.4
A
17.6
A
VSD (1) Forward On Voltage
ISD = 4.4 A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 4.4 A, di/dt = 100 A/µs
310
ns
Qrr
Reverse Recovery Charge VDD = 30V, Tj = 150°C
1425
nC
IRRM
Reverse Recovery Current (see Figure 20)
9.2
A
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
3/17
Share Link: