STP12NM50FDFP(2002) 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STP12NM50FDFP
(Rev.:2002)

N-CHANNEL500V-0.32Ω-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh™ Power MOSFET (with FAST DIODE)

STMicroelectronics 

STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM (l) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

VISO

Insulation Withstand Voltage (DC)

Tj

Operating Junction Temperature

Tstg

Storage Temperature

(l) Pulse width limited by safe operating area

(1) ISD ≤12A, di/dt ≤ 400 µA, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

Value

TO-220 /

D2PAK / I2PAK TO-220FP

500

500

± 30

12

12 (*)

7.5

7.5 (*)

48

48 (*)

160

35

1.28

0.28

20

-

2500

- 65 to 150

- 65 to 150

TO-247

14

8.8

56

175

1.4

Unit

V

V

V

A

A

A

W

W/°C

V/ns

V

°C

°C

THERMAL DATA

TO-220

I2PAK

D2PAK

TO-220FP

TO-247

Rthj-case Thermal Resistance Junction-case Max

0.78

3.57

0.715 °C/W

Rthj-pcb Thermal Resistance Junction-pcb Max

(When mounted on minimum Footprint)

30

°C/W

Rthj-amb Thermal Resistance Junction-ambient Max

62.5

30 °C/W

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C

AVALANCHE CHARACTERISTICS

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Max Value

6

400

Unit

A

mJ

2/14

Share Link: