D5NM60(2003) 查看數據表（PDF） - STMicroelectronics
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D5NM60
(Rev.:2003)
(Rev.:2003)
STMicroelectronics
D5NM60 Datasheet PDF : 13 Pages
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STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max.
gfs (1)
Forward Transconductance VDS = ID(on) x RDS(on)max,
2.4
ID = 2.5A
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
440
Coss
Output Capacitance
100
Crss
Reverse Transfer
10
Capacitance
Coss eq. (2) Equivalent Output
VGS = 0V, VDS = 0V to 480V
50
Capacitance
RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
4
Test Signal Level = 20mV
Open Drain
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max.
td(on)
Turn-on Delay Time
VDD = 300 V, ID = 2.5 A
14
tr
Rise Time
RG = 4.7Ω VGS = 10 V
10
(Resistive Load see, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400V, ID = 5 A,
VGS = 10V
13
18
5
6
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 300 V, ID = 2.5 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 480V, ID = 5 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
23
10
7
10
17
Max.
Unit
S
pF
pF
pF
pF
Ω
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 5 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100A/µs
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100A/µs
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min. Typ. Max. Unit
8
A
32
A
1.5
V
300
ns
1950
µC
13
A
445
ns
3005
µC
13.5
A
3/13
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