B8NM60(2005) 查看數據表（PDF） - STMicroelectronics
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产品描述 (功能)
生产厂家
B8NM60
(Rev.:2005)
(Rev.:2005)
STMicroelectronics
B8NM60 Datasheet PDF : 16 Pages
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STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60
Table 3: Absolute Maximum ratings
Symbol
Parameter
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( )
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Operating Junction Temperature
Tstg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤ 5A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
TO-220/D²PAK
8
5
32
100
0.8
15
-
Value
TO-220FP
± 30
8 (*)
5 (*)
32 (*)
30
0.24
15
2500
DPAK/IPAK
5
3.1
20
96
0.4
15
-
Unit
V
A
A
A
W
W/°C
V/ns
V
-55 to 150
°C
TO-220/D²PAK
1.25
TO-220FP
4.16
62.5
300
DPAK/IPAK
1.3
°C/W
°C/W
°C
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
2.5
200
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
600
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current
(VGS = 0)
VDS = Max Rating
VDS = Max Rating,
TC = 125 °C
1
10
IGSS
Gate-body Leakage VGS = ± 30V
Current (VDS = 0)
±100
VGS(th)
Gate Threshold
Voltage
VDS = VGS, ID = 250µA
3
4
5
RDS(on)
Static Drain-source VGS = 10V, ID = 2.5 A
On Resistance
0.9
1
Unit
A
mJ
Unit
V
µA
µA
nA
V
Ω
2/16
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