STB8NM60 查看數據表（PDF） - STMicroelectronics
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STB8NM60 Datasheet PDF : 18 Pages
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STP8NM60, STD5NM60, STB8NM60
2
Electrical characteristics
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
600
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating @125 °C
1 µA
10 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±100 nA
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 2.5 A
0.9 1
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs
Forward transconductance
VDS = ID(on) x RDS(on)max,
ID = 2.5 A
2.4
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f=1 MHz,
VGS=0
400
pF
100
pF
10
pF
Coss
(1)
eq .
Equivalent output
capacitance
VGS=0, VDS =0 to 480 V
50
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD= 400 V, ID = 5 A
VGS =10 V
(see Figure 12)
13 18 nC
5
nC
6
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
3/18
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