STD1LNC60-1 查看數據表（PDF） - STMicroelectronics

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STD1LNC60-1

N-CHANNEL 600V - 12Ω - 1A - IPAK/DPAK PowerMESH™II MOSFET

STMicroelectronics 

STD1LNC60

N-CHANNEL 600V - 12Ω - 1A - IPAK/DPAK

PowerMESH™II MOSFET

TYPE

VDSS

RDS(on)

ID

STD1LNC60

600 V

< 15 Ω

1A

s TYPICAL RDS(on) = 12 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s NEW HIGH VOLTAGE BENCHMARK

s GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH™II is the evolution of the first

generation of MESH OVERLAY™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s BATTER CHARGER, ADAPTOR AND STAND-

BY POWER SUPPLY

3

2

1

IPAK

TO-251

3

1

DPAK

TO-252

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM (q) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

February 2001

Value

600

600

± 30

1

0.63

4

30

0.24

3.5

–65 to 150

150

Unit

V

V

V

A

A

A

W

W/°C

V/ns

°C

°C

(1)ISD ≤ 1A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

1/9

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