STP45NF06L 查看數據表（PDF） - STMicroelectronics
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STP45NF06L Datasheet PDF : 10 Pages
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STP45NF06L - STB45NF06L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
1.87
Rthj-amb Thermal Resistance Junction-ambient Max
62.5
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
Unit
38
A
135
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
60
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±16V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 5 V, ID = 19 A
VGS = 10V, ID = 19 A
Min. Typ. Max. Unit
1
1.7
2.5
V
0.024 0.03
Ω
0.022 0.028
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS =15V , ID=19 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
24
1600
217
62
Max.
Unit
S
pF
pF
pF
2/10
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