3NF06L(2002) 查看數據表（PDF） - STMicroelectronics

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3NF06L
(Rev.:2002)

N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET™ II POWER MOSFET

STMicroelectronics 

STN3NF06L

N-CHANNEL 60V - 0.07Ω - 4A SOT-223

STripFET™ II POWER MOSFET

TYPE

VDSS

RDS(on)

ID

STN3NF06L

60 V

< 0.1 Ω

4A

s TYPICAL RDS(on) = 0.07 Ω

s EXCEPTIONAL dv/dt CAPABILITY

s AVALANCHE RUGGED TECHNOLOGY

s 100% AVALANCHE TESTED

s LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s DC-DC & DC-AC COVERTERS

s DC MOTOR CONTROL (DISK DRIVERS, etc.)

s SYNCHRONOUS RECTIFICATION

2

3

2

1

SOT-223

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID(•)

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM(••) Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

EAS (2) Single Pulse Avalanche Energy

Tstg

Storage Temperature

Tj

Operating Junction Temperature

(••) Pulse width limited by safe operating area.

(•) Current limited by the package

December 2002

.

Value

60

60

± 16

4

2.9

16

3.3

0.026

10

200

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

-55 to 150

°C

(1) ISD ≤ 3A, di/dt ≤150A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 4A, VDD = 30V

1/8

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