3NF06L 查看數據表（PDF） - STMicroelectronics

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3NF06L

N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STN3NF06L

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

60

V

Zero gate voltage drain

IDSS current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

1 µA

10 µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16 V

± 100 nA

VGS(th) Gate threshold voltage

VDS= VGS, ID = 250 µA

1

2.8 V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 1.5 A

VGS= 5 V, ID= 1.5 A

0.07 0.10 Ω

0.085 0.12 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Forward transconductance VDS= 15 V, ID=1.5 A

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=48 V, ID = 3 A

VGS =5 V

(see Figure 15)

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

3

S

340

pF

63

pF

30

pF

7

9 nC

1.5

nC

2.8

nC

Table 6. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

rise time

td(off)

tf

Turn-off delay time

fall time

Test conditions

VDD=30 V, ID=1.5 A,

RG=4.7 Ω, VGS=5 V

(see Figure 14)

VDD=30 V, ID=1.5 A,

RG=4.7 Ω, VGS=5 V

(see Figure 14)

Min. Typ. Max. Unit

9

ns

25

ns

20

ns

10

ns

4/12

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