STL34NF06 查看數據表（PDF） - STMicroelectronics

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STL34NF06

N-CHANNEL 60V - 0.024Ω - 34A PowerFLAT™ LOW GATE CHARGE STripFET™II MOSFET

STMicroelectronics 

STL34NF06

N-CHANNEL 60V - 0.024Ω - 34A PowerFLAT™

LOW GATE CHARGE STripFET™II MOSFET

PRELIMINARY DATA

TYPE

VDSS

RDS(on)

ID

STL34NF06

60 V < 0.028Ω 34 A

TYPICAL RDS(on) = 0.024Ω

IMPROVED DIE-TO-FOOTPRINT RATIO

VERY LOW PROFILE PACKAGE

DESCRIPTION

This Power MOSFET is the second generation of

STMicroelectronics unique “STripFET™” technolo-

gy. The resulting transistor shows extremely low on-

resistance and minimal gate charge. The new Pow-

erFLAT™ package allow a significant reduction in

board space without compramising performance.

APPLICATIONS

DC-DC CONVERTERS

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

PowerFLAT™(5x5)

(Chip Scale Package)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C (*)

Drain Current (continuous) at TC = 100°C

IDM ( ) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

EAS (1) Single Pulse Avalanche Energy

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(*) Current Limited by Wire Bonding is 20A

November 2002

Value

60

60

± 20

34

20

136

70

0.56

250

–55 to 150

(1) Starting Tj = 25°C, ID = 17A, VDD = 42V

Unit

V

V

V

A

A

A

W

W/°C

mJ

°C

1/6

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