STP9NK65Z 查看數據表（PDF） - STMicroelectronics
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STP9NK65Z
STMicroelectronics
STP9NK65Z Datasheet PDF : 7 Pages
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Electrical characteristics
2
Electrical characteristics
STP9NK65Z - STP9NK65ZFP
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min.
Drain-source
V(BR)DSS breakdown voltage
ID = 1 mA, VGS = 0
650
IDSS
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, @125 °C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA
3
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 3.2 A
Typ.
3.75
1
Max. Unit
V
1
µA
50
µA
±10 µA
4.5
V
1.2
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 15 V, ID = 3.2 A
VDS = 25 V, f = 1 MHz,
VGS = 0
6
S
pF
1145
pF
130
pF
28
Coss
(2)
eq .
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
55
pF
Qg
Total gate charge
VDD = 520 V, ID = 6.4 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 18)
41
nC
7.5
nC
22
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/15
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