STL5NK65Z 查看數據表（PDF） - STMicroelectronics
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STL5NK65Z
STMicroelectronics
STL5NK65Z Datasheet PDF : 6 Pages
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STL5NK65Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID (2)
Drain Current (continuous) at TC = 25°C (Steady State)
Drain Current (continuous) at TC = 100°C
IDM (2) Drain Current (pulsed)
PTOT (2) Total Dissipation at TC = 25°C (Steady State)
PTOT (1) Total Dissipation at TC = 25°C (Steady State)
Derating Factor (2)
dv/dt (4) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
THERMAL DATA
Symbol
Parameter
Rthj-F Thermal Resistance Junction-Foot (Drain)
Rthj-amb (2) Thermal Resistance Junction-ambient
Note: 1. The value is rated according to Rthj-F.
2. When Mounted on FR-4 Board of 1inch2, 2 oz Cu
3. Pulse width limited by safe operating area
4. ISD<4.2A, di/dt<300A/µs, VDD<V(BR)DSS, TJ<TJMAX
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Value
650
650
± 30
0.76
0.48
3
2.5
75
0.02
4.5
–55 to 150
Max.
1.67
50
Unit
V
V
V
A
A
A
W
W
W/°C
V/ns
°C
Unit
°C/W
°C/W
Max Value
4.2
190
Unit
A
mJ
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
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