STP12NK80Z(2005) 查看數據表（PDF） - STMicroelectronics
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STP12NK80Z
(Rev.:2005)
(Rev.:2005)
STMicroelectronics
STP12NK80Z Datasheet PDF : 15 Pages
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2 Electrical characteristics
STB12NK80Z - STP12NK80Z - STW12NK80Z
Table 7. Source drain diode
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDMNote 2 Source-drain Current (pulsed)
VSDNote 4 Forward on Voltage
ISD=10.5 A, VGS=0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=10.5A, di/dt = 100A/µs,
VDD=100 V, Tj=150°C
Min.
Typ. Max. Unit
10.5
A
42
A
1.6
V
635
ns
5.9
µC
18.5
A
Table 8. Gate-source zener diode
Symbol
Parameter
Test Conditions
Min.
BVGSO
Note 6
Gate-Source
Igs=±1mA
Breakdown Voltage (Open Drain)
30
Typ.
Max.
Unit
V
(1) ISD ≤10.5 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80%VDSS
(6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but
also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this
respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
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