STP12NK80Z 查看數據表（PDF） - STMicroelectronics
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STP12NK80Z
STMicroelectronics
STP12NK80Z Datasheet PDF : 22 Pages
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STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified).
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
IGSS
VGS(th)
RDS(on)
Peak diode recovery
voltage slope
VDS = 800 V,
VDS =800 V, Tc=125°C
Gate body leakage current
(VGS = 0)
VGS = ± 20V
Gate threshold voltage
VDS= VGS, ID = 100µA
Static drain-source on-
resistance
VGS= 10V, ID = 5.25A
Min. Typ. Max. Unit
800
V
1
µA
50 µA
±10 µA
3 3.75 4.5
V
0.65 0.75 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15V, ID = 5.25A
-
12
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
2620
pF
VDS =25V, f=1 MHz, VGS=0 -
250
-
pF
53
pF
Cosseq(2)
Equivalent output
capacitance
VGS=0, VDS =0V to 640V
- 100
-
pF
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
tr(Voff)
tf
tc
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Off voltage rise time
Fall time
Cross-over time
VDD=640V, ID = 10.5A
VGS =10V
(see Figure 21)
VDD=400 V, ID= 5.25A,
RG=4.7Ω, VGS=10V
(see Figure 22)
VDD=640 V, ID= 10.5A,
RG=4.7Ω, VGS=10V
(see Figure 22)
87
nC
-
14
-
nC
44
nC
30
ns
18
ns
-
-
70
ns
20
ns
16
ns
-
15
-
ns
28
ns
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Doc ID 9567 Rev 7
5/22
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