P5NB80 查看數據表（PDF） - STMicroelectronics

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P5NB80

N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET

STMicroelectronics 

STP5NB80

®

STP5NB80FP

N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP

PowerMESH™ MOSFET

TYPE

VDSS

RDS(on)

ID

ST P5N B80

800 V < 2.2 Ω

5A

ST P5N B80 FP

800 V

< 2.2 Ω

5A

s TYPICAL RDS(on) = 1.8 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

3

2

1

TO-220

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

S ymb ol

Parameter

VDS Drain-source Voltage (VGS = 0)

V DGR

VGS

ID

ID

IDM(•)

Ptot

Drain- gat e Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (cont inuous) at Tc = 25 o C

Drain Current (cont inuous) at Tc = 100 oC

Drain Current (pulsed)

T otal Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

VISO Insulation Withstand Voltage (DC)

Ts tg Storage T emperature

Tj

Max. Operating Junction T emperature

(*) Limited only by maximum temperature allowed

January 1999

Value

Unit

STP5NB80 STP5NB80FP

800

V

800

V

± 30

V

5

5(*)

A

3.2

3.2(*)

A

20

20

A

110

0.88

40

0.32

W

W /o C

4

4

V/ns



2000

V

-65 to 150

oC

150

oC

( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

1/9

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