STB6NC80 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STB6NC80

N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET

STMicroelectronics 

STP6NC80Z/FP/STP6NC80Z-1

THERMAL DATA

Rthj-case

Rthj-amb

Tl

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering Purpose

TO-220 / D²PAK /

I²PAK

1

30

300

TO-220FP

3.13

AVALANCHE CHARACTERISTICS

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Max Value

5.4

237

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max.

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

800

∆BVDSS/∆TJ

Breakdown Voltage Temp.

Coefficient

ID = 1 mA, VGS = 0

0.9

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

50

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ±20V

±10

°C/W

°C/W

°C

Unit

A

mJ

Unit

V

V/°C

µA

µA

µA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10V, ID = 3 A

Min. Typ. Max. Unit

3

4

5

V

1.5

1.8

Ω

DYNAMIC

Symbol

gfs (1)

Parameter

Forward Transconductance

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(on) x RDS(on)max,

ID = 3A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

7

1600

125

12

Max.

Unit

S

pF

pF

pF

2/13

Share Link: