2N7002KW 查看數據表（PDF） - Fairchild Semiconductor
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2N7002KW Datasheet PDF : 8 Pages
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID =10μA
IDSS
Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
IGSS Gate-Body Leakage
VGS = ±20V, VDS = 0V
On Characteristics (Note1)
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source
On-Resistance
VDS(ON) Drain-Source On-Voltage
ID(ON) On-State Drain Current
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250μA
VGS = 10V, ID = 500mA
VGS = 10V, ID = 500mA, TJ = 100°C
VGS = 5V, ID = 50mA
VGS = 5V, ID = 50mA, TJ = 100°C
VGS = 10V, ID = 500mA
VGS = 5V, ID = 50mA
VGS = 10V, VDS = 2V
VDS = 2V, ID = 0.2A
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS= 0V, f = 1.0MHz
tD(ON) Turn-On Delay Time
tD(OFF) Turn-Off Delay Time
VDD = 30V, RL = 150Ω, VGS= 10V,
ID = 200mA, RGEN = 25Ω
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward
Voltage
VGS = 0V, IS = 115mA
Min.
60
1.1
500
80
Note1 : 1. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
Typ.
Max. Units
V
1.0 μA
0.5 mA
±10 μA
2.1
V
1.6
Ω
2.4
Ω
2
Ω
3
Ω
3.75 V
1.5
V
mA
mS
50
pF
25
pF
5
pF
20
ns
60
ns
115 mA
0.8
A
1.1
V
© 2011 Fairchild Semiconductor Corporation
2N7002KW Rev. A0
2
www.fairchildsemi.com
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