2N7002KW 查看數據表（PDF） - Fairchild Semiconductor
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2N7002KW Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics.
2.4
V = 10V
GS
2.1
9V
8V
1.8
6V
7V
1.5
5V
1.2
0.9
4V
0.6
0.3
V = 3V
GS
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V . Drain-Source Voltage (V)
DS
Figure 3. On-Resistance Variation with
Gate Voltage and Drain Current.
3.0
V = 4V
GS
2.5
4.5V
5V
2.0
6V
V = 7V
GS
1.5
1.0
8V
9V
10V
0.5
0.0
0.5
1.0
1.5
2.0
I . Drain-Source Current(A)
D
Figure 5. Transfer Characteristics
3.5
V = 10V
DS
3.0
2.5
T = 25(oC)
A
T = -55(oC)
A
2.0
T = 125(oC)
A
1.5
1.0
0.5
0.0
0
1
2
3
4
5
6
7
8
9 10
V . Gate-Source Voltage (V)
GS
Figure 2. On-Resistance Variation with
Temperature.
2.2
2.0
1.8
V = 10V
GS
1.6
I = 500mA
D
1.4
V = 5V
1.2
GS
I = 50mA
D
1.0
0.8
0.6
0.4
-50
0
50
100
150
T . Junction Temperature (oC)
J
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
5
V = 10V
GS
4
3
T = 125oC
A
2
T = 25oC
A
1
T = -55oC
A
0
0.0
0.5
1.0
1.5
2.0
I . Drain Current (A)
D
Figure 6. Gate Threshold Variation with
Temperature.
1.10
V =V
DS
GS
1.05
1.00
I = 1mA
0.95
D
0.90
I = 0.25mA
D
0.85
0.80
0.75
-25
0
25
50
75
100
125
T . Junction Temperature (oC)
J
© 2011 Fairchild Semiconductor Corporation
2N7002KW Rev. A0
3
www.fairchildsemi.com
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