2N7002KW 查看數據表（PDF） - Fairchild Semiconductor
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2N7002KW Datasheet PDF : 8 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
with Temperature
1.100
1.075
I =250uA
D
1.050
1.025
1.000
0.975
0.950
0.925
-25
0
25
50
75
100
125
T , Junction Temperatture(o C)
J
Figure 8. Body Diode Forward Voltage Variation
with Source Current and Temperature.
10000
V =0V
GS
1000
100
T =125oC
A
10
T =25oC
A
1
T =-55oC
A
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD. Body Diode Forward Voltage [V]
Figure 9. Capacitance Characteristics.
100
C
ISS
10
f = 1MHZ
V = 0V
GS
1
1
C
OSS
C
RSS
10
100
V . Drain to Source Voltage (V)
DS
Figure 11. Maximum Safe Operating Area.
Figure 10. Gate Charge Characteristics.
10
V = 25V
DS
8
6
4
I = 500mA
D
2
I = 115mA
D
I = 280mA
D
0
0.0
0.2
0.4
0.6
0.8
1.0
Qg. Gate Charge (nC)
Figure 12. Transient Thermal Response Curve.
100
10-1
10-2
10-3
10-4
10-1
R Limit
DS(on)
100μs
1ms
10ms
100ms
1S
DC
Vgs=10V
Single Pulse
Rthja=410oC/W
T = 25 oC
a
100
101
102
V , Drain-Source Voltage [V]
DS
1
50%
20%
0.1 10%
5%
2%
D=1%
Single Pulse
0.01
1E-4
1E-3
0.01
Rthja(t)=r(t)*Rthja
Rthja=410oC/W
0.1
1
10
100
1000
t1, time(sec)
© 2011 Fairchild Semiconductor Corporation
2N7002KW Rev. A0
4
www.fairchildsemi.com
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