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MTP3055V Datasheet PDF : 8 Pages
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MTP3055V
Preferred Device
Power MOSFET
12 Amps, 60 Volts
N–Channel TO–220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
• On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E–FET Predecessors
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and
TMOS E–FET
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp ≤ 10 ms)
Drain Current – Continuous @ 25°C
Drain Current – Continuous @ 100°C
Drain Current – Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ 25°C
Derate above 25°C
VDSS
60
VDGR
60
VGS
± 20
VGSM ± 25
ID
12
ID
7.3
IDM
37
PD
48
0.32
Operating and Storage Temperature Range TJ, Tstg –55 to
175
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 12 Apk, L = 1.0 mH, RG = 25 Ω)
EAS
72
Thermal Resistance – Junction to Case
Thermal Resistance – Junction to Ambient
RθJC
3.13
RθJA
62.5
Maximum Lead Temperature for Soldering
TL
260
Purposes, 1/8″ from case for 10 seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
12 AMPERES
50 VOLTS
RDS(on) = 150 mΩ
N–Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
1
2
3
TO–220AB
CASE 221A
STYLE 5
MTP3055V
LLYWW
1
Gate
3
Source
2
Drain
MTP3055V
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP3055V
TO–220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
February, 2001 – Rev. 3
Publication Order Number:
MTP3055V/D
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