VN10LP 查看數據表（PDF） - Zetex => Diodes

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VN10LP

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Zetex => Diodes 

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – NOVEMBER 2005

FEATURES

* 60 Volt VDS

* RDS(on)=5Ω

VN10LP

REFER TO ZVN3306A FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at Tamb = 25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at Tamb = 25°C

Operating and Storage Temperature Range

SYMBOL

VDS

ID

IDM

VGS

Ptot

Tj:Tstg

D

G

S

E-Line

TO92 Compatible

VALUE

60

270

3

± 20

625

-55 to +150

UNIT

V

mA

A

V

mW

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Drain-Source

Breakdown Voltage

BVDSS

60

V

ID=100µA, VGS=0V

Gate-Source Threshold VGS(th)

0.8

Voltage

2.5

V

ID=1mA, VDS= VGS

Gate Body Leakage

Zero Gate Voltage

Drain Current (1)

IGSS

IDSS

100 nA

10

µA

VGS=± 20V, VDS=0V

VDS=60 V, VGS=0V

On State Drain

Current(1)

ID(on)

750

mA

VDS=15 V, VGS=10V

Static Drain Source On RDS(on)

State Resistance (1)

Forward

gfs

100

Transconductance

(1)(2)

5.0

Ω

7.5

Ω

VGS=10V,ID=500mA

VGS=5V, ID=200mA

mS

VDS=15V,ID=500mA

Input Capacitance (2)

Common Source

Output Capacitance (2)

Ciss

Coss

60

pF

25

pF

VDS=25 V, VGS=0V

f=1MHz

Reverse Transfer

Crss

Capacitance (2)

5

pF

Turn-On Time (2)(3)

Turn-Off Time (2)(3)

t(on)

t(off)

10

ns

VDD ≈15V, ID=600mA

10

ns

3-90

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