DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UPA1760G-E1 查看數據表(PDF) - NEC => Renesas Technology

零件编号
产品描述 (功能)
生产厂家
UPA1760G-E1
NEC
NEC => Renesas Technology NEC
UPA1760G-E1 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
µPA1760
TYPICAL CHARACTERISTICS (TA = 25°C)
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
10
TA=125˚C
TA=75˚C
1
TA=25˚C
TA=25˚C
VDS = 10 V
0.1
1
2
3
4
5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS=10V
Pulsed
TA = 25˚C
TA = 25˚C
10
TA =75˚C
1
TA =125˚C
0.1
0.1
1
10
100
ID- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
80
VGS=4.0V
60
40
VGS=4.5V
20
VGS=10V
0.1
1
10
100
ID - Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
30
25
20
VGS=10 V
VGS=4.5 V
VGS=4.0 V
15
10
5
0
0.0
0.4
0.8
1.2
1.6
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
Pulsed
90
80
ID=4 A
70
ID=8 A
60
50
40
30
20
10
0
0
5
10
15
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS=10 V
ID=1 mA
2.0
1.0
50
0
50 100 150
Tch - Channel Temperature - ˚C
Data Sheet G13891EJ2V0DS
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]