UPA1760G-E1 查看數據表（PDF） - NEC => Renesas Technology
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UPA1760G-E1 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
40
VGS=4.5V
30
VGS=10V
20
10
− 50
0
50 100 150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
Ciss
Coss
100
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1
10
100
ID - Drain Current - A
µPA1760
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
VGS=10V
1
VGS=0V
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
tr
100
10
1
0.1
tf
td(off)
td(on)
VDS = 15 V
VGS = 10 V
RG = 10 Ω
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
16
ID = 8 A
35
14
30
12
25
VDD=24 V
VDD=15 V
VGS
10
VDD=6 V
20
8
15
6
10
4
5
VDS
2
0
0
0
5 10 15 20 25 30
QG - Gate Charge - nC
4
Data Sheet G13891EJ2V0DS
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