BFR30 查看數據表（PDF） - Philips Electronics

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BFR30

N-channel field-effect transistors

Philips Electronics 

Philips Semiconductors

N-channel field-effect transistors

Product specification

BFR30; BFR31

DESCRIPTION

Planar epitaxial symmetrical junction N-channel

field-effect transistor in a plastic SOT23 package.

APPLICATIONS

• Low level general purpose amplifiers in thick and

thin-film circuits.

PINNING - SOT23

PIN

SYMBOL

DESCRIPTION

1

d

drain(1)

2

s

source(1)

3

g

gate

Note

1. Drain and source are interchangeable.

handbook, halfpage

3

1

2

Top view

d

g

s

MAM385

Marking codes:

BFR30: M1p.

BFR31: M2p.

Fig.1 Simplified outline and symbol.

CAUTION

This product is supplied in anti-static packing to prevent

damage caused by electrostatic discharge during

transport and handling. For further information, refer to

Philips specs.: SNW-EQ-608, SNW-FQ-302A and

SNW-FQ-302B.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VDS

VGSO

Ptot

IDSS

drain-source voltage

gate-source voltage

total power dissipation

drain current

BFR30

BFR31

yfs

common-source transfer admittance

BFR30

BFR31

CONDITIONS

open drain

Tamb ≤ 40 °C

VGS = 0; VDS = 10 V

ID = 1 mA; VDS = 10 V; f = 1 kHz

MIN.

−

−

−

MAX.

±25

−25

250

UNIT

V

V

mW

4

10

mA

1

5

mA

1

4

mS

1.5

4.5

mS

1997 Dec 05

2

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