BFR30 查看數據表（PDF） - Philips Electronics

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BFR30

N-channel field-effect transistors

Philips Electronics 

Philips Semiconductors

N-channel field-effect transistors

Product specification

BFR30; BFR31

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VDS

VDGO

VGSO

ID

IG

Ptot

Tstg

Tj

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

forward gate current (DC)

total power dissipation

storage temperature

operating junction temperature

open source

open drain

Tamb ≤ 40 °C; note 1; see Fig.2

Note

1. Mounted on a ceramic substrate of 8 × 10 × 0.7 mm.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Note

1. Mounted on a ceramic substrate of 8 × 10 × 0.7 mm.

CONDITIONS

note 1

MIN.

−

−

−

−

−

−

−65

−

MAX.

±25

−25

−25

10

5

250

+150

150

UNIT

V

V

V

mA

mA

mW

°C

°C

VALUE

430

UNIT

K/W

handboo3k,0h0alfpage

Ptot

(mW)

200

MDA245

100

0

0

40

80

120

160

200

Tamb (°C)

Fig.2 Power derating curve.

1997 Dec 05

3

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