SGH13N60UFD 查看數據表（PDF） - Fairchild Semiconductor

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SGH13N60UFD

N-CHANNEL IGBT

Fairchild Semiconductor 

SGH13N60UFD

N-CHANNEL IGBT

ELECTRICAL CHARACTERISTICS (DIODE PART)

(Tc=25°C,Unless Otherwise Specified)

Symbol

Characteristics

VFM

Diode Forward Voltage

Trr

Diode Reverse

Recovery Time

Irr

Diode Peak Reverse

Recovery Current

Qrr

Diode Reverse

Recovery Charge

Test Conditions

MMiinn Typ Max Units

IF=8.0A

Tc =25°C - 1.4 1.7

V

Tc =100°C - 1.3

-

Tc =25°C

- 37 55

nS

Tc =100°C - 55

-

IF=8.0A, VR=200V Tc =25°C

- 3.5 5.0

A

-di/dt=200A/uS

Tc =100°C - 4.5

-

Tc =25°C - 65 138 nC

Tc =100°C - 124 -

THERMAL RESISTANCE

Symbol Characteristics

Min

Typ

Max

Units

RθJC

Junction-to-Case (IGBT)

-

-

2.0

°C/W

RθJC

Junction-to-Case (DIODE)

-

-

3.5

°C/W

RθJA

Junction-to-Ambient

-

-

40

°C/W

RθCS

Case-to-Sink

-

0.24

-

°C/W

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