SGH13N60UFD 查看數據表（PDF） - Fairchild Semiconductor
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SGH13N60UFD Datasheet PDF : 8 Pages
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SGH13N60UFD
10
N-CHANNEL IGBT
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
Pdm
t1
t2
single pulse
0.01
0.00001
0.0001
Duty factor D = t1 / t2
Peak Tj = Pdm x Zthjc + Tc
0.001
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case
600
500
400
Cies
300
200
100
0
1
Coes
Cres
10
Vce [V]
Fig.6 Typical Capacitance vs.
Collector to Emitter Voltage
18
Vcc = 300V
Ic = 6.5A
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
Qg [nC]
Fig.7 Typical Gate Charge vs.
Gate to Emitter Voltage
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