BF556B 查看數據表（PDF） - Philips Electronics
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BF556B Datasheet PDF : 11 Pages
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Philips Semiconductors
N-channel silicon junction
field-effect transistors
Product specification
BF556A; BF556B; BF556C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
VGSO
VGDO
IG
Ptot
Tstg
Tj
PARAMETER
drain-source voltage (DC)
gate-source voltage
gate-drain voltage (DC)
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open drain
open source
up to Tamb = 25 °C; note 1
MIN.
−
−
−
−
−
−65
−
MAX.
±30
−30
−30
10
250
150
150
UNIT
V
V
V
mA
mW
°C
°C
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 1
500
K/W
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)GSS
VGSoff
IDSS
IGSS
yfs
yos
gate-source breakdown voltage
gate-source cut-off voltage
drain current
BF556A
IG = −1 µA; VDS = 0
ID = 200 µA; VDS = 15 V
VGS = 0; VDS = 15 V
BF556B
BF556C
gate leakage current
forward transfer admittance
common source output
admittance
VGS = −20 V; VDS = 0
VGS = 0; VDS = 15 V
VGS = 0; VDS = 15 V
MIN.
−30
−0.5
3
6
11
−
4.5
−
TYP.
−
−
−
−
−0.5
−
40
MAX.
−
−7.5
7
13
18
−5 000
−
−
UNIT
V
V
mA
mA
mA
pA
mS
µS
1996 Jul 29
3
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