UPA1727 查看數據表（PDF） - NEC => Renesas Technology
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UPA1727 Datasheet PDF : 4 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1727
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µPA1727 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Single chip type
• Low On-state Resistance
5 RDS(on)1 = 14 mΩ (TYP.) (VGS = 10 V, ID = 5.0 A)
5 RDS(on)2 = 17 mΩ (TYP.) (VGS = 4.5 V, ID = 5.0 A)
5 RDS(on)3 = 19 mΩ (TYP.) (VGS = 4.0 V, ID = 5.0 A)
5 • Low Ciss : Ciss = 2400 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1727
Power SOP8
PACKAGE DRAWING (Unit : mm)
8
5
1, 2, 3 ; Source
4
; Gate
5, 6, 7, 8 ; Drain
1
4
5.37 Max.
6.0 ±0.3
4.4
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±10
A
Drain Current (Pulse) Note1
ID(pulse)
±40
A
Total Power Dissipation (TA = 25 °C) Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current Note3
5 Single Avalanche Energy Note3
Tstg –55 to + 150 °C
IAS
10
A
EAS
200
mJ
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
5
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14330EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
The mark 5 shows major revised points.
©
Printed in Japan
1999,2000
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