BU9831 查看數據表（PDF） - ROHM Semiconductor

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BU9831

Non-volatile electronic potentiometer

ROHM Semiconductor 

Memory ICs

BU9831 / BU9831F

(unless otherwise noted, Ta = – 20 to + 85°C, VCC = 3V ± 10%)

Parameter

Symbol Min. Typ. Max. Unit

Input low level voltage

VIL

—

—

0.2 ×

VCC

V

Input high level voltage

VIH

0.8 ×

VCC

—

—

V

Output low level voltage VOL

0

—

0.4

V

Output high level voltage VOH

VCC –

0.4

—

VCC

V

Input leakage current

ILI

–1

—

1

µA

Output leakage current

ILO

–1

—

1

µA

Operating current consumption ICC

—

—

2

mA

Standby current

ISB

—

—

100

µA

SK frequency

fSK

—

—

500

kHz

Total resistance

RT

—

100

—

kΩ

Wiper resistance

RW

—

1

2

kΩ

Resistance potential on High side VVH

0

—

VCC

V

Resistance potential on Low side VVL

0

—

VCC

V

Conditions

CS, SK, DIO pin

Measurement

Circuit

—

CS, SK, DIO pin

IOL = 100µA

IOH = – 100µA

VIN = 0 ~ VCC

VOUT = 0 ~ VCC, CS = VCC

f = 1MHz, tE / W = 10ms (WRITE)

CS, SK, DIO, VH, VL, VW = VCC

—

Fig.1

Fig.6

Fig.3

Fig.4

Fig.5

Fig.6

If = 10µA

IW = – 500µA

Fig.7

Fig.8

—

—

•Measurement circuits

VCC

VCC

VCC

GND

IOL

DIO

V VOL

VCC

GND

IOH

DIO

V VOH

Data set when output is LOW

Fig. 1 LOW output voltage measurement circuit

VCC

Data set when output is HIGH

Fig. 2 HIGH output voltage measurement circuit

VCC

VCC

VIN = 0 ~ VCC

VCC

ILI

A

DIO, SK, CS

GND

VCC

ILO

CS

DIO

A

GND

VO = 0 ~ VCC

Fig. 3 Input leakage current measurement circuit

4

Fig. 4 Output leakage current measurement circuit

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