BFS17A 查看數據表（PDF） - Philips Electronics
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BFS17A Datasheet PDF : 6 Pages
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Philips Semiconductors
NPN 3 GHz wideband transistor
Product specification
BFS17A
DESCRIPTION
NPN transistor in a plastic SOT23 package.
APPLICATIONS
• It is intended for RF applications such as oscillators
in TV tuners.
PINNING
PIN
1
base
2
emitter
3
collector
DESCRIPTION
handbook, halfpage
3
1
Top view
2
MSB003
Marking code: E2p.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
fT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
GUM
maximum unilateral power gain
F
noise figure
VO
output voltage
CONDITIONS
open emitter
open base
up to Ts = 70 °C; note 1
IC = 25 mA; VCE = 5 V; f = 500 MHz;
Tamb = 25 °C
IC = 14 mA; VCE = 10 V; f = 800 MHz
IC = 2 mA; VCE = 5 V; f = 800 MHz;
Tamb = 25 °C
dim = −60 dB; IC = 14 mA; VCE = 10 V;
RL = 75 Ω; Tamb = 25 °C;
f(p+q−r) = 793.25 MHz
TYP.
−
−
−
−
2.8
13.5
2.5
150
MAX.
25
15
25
300
−
UNIT
V
V
mA
mW
GHz
−
dB
−
dB
−
mV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to Ts = 70 °C; note 1
Note to the Quick reference data and the Limiting values
1. Ts is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−
−65
−
MAX.
25
15
2.5
25
50
300
+150
150
UNIT
V
V
V
mA
mA
mW
°C
°C
September1995
2
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