BFG590W/X 查看數據表（PDF） - Philips Electronics
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BFG590W/X Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590W; BFG590W/X
30
handbook, halfpage
gain
(dB)
20
10
MLC059
G max
GUM
12
handbook, halfpage
gain
(dB)
8
4
MLC060
G max
GUM
0
0
20
40
60
80
100
IC (mA)
f = 900 MHz; VCE = 4 V.
Fig.6 Gain as a function of collector current;
typical values.
0
0
20
40
60
80
100
IC (mA)
f = 2 GHz; VCE = 4 V.
Fig.7 Gain as a function of collector current;
typical values.
50
handgboaoink, halfpage
(dB)
40
G UM
MSG
30
20
10
0
10
102
MLC061
G max
103
104
f (MHz)
50
handgboaoink, halfpage
(dB)
40 G UM
MSG
30
20
10
0
10
102
MLC062
G max
103
104
f (MHz)
IC = 20 mA; VCE = 4 V.
Fig.8 Gain as a function of frequency;
typical values.
1998 Oct 15
IC = 80 mA; VCE = 4 V.
Fig.9 Gain as a function of frequency;
typical values.
6
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