BFG135 查看數據表（PDF） - Philips Electronics
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BFG135 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 7GHz wideband transistor
Product specification
BFG135
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT223 envelope,
intended for wideband amplifier
applications. The small emitter
structures, with integrated
emitter-ballasting resistors, ensure
high output voltage capabilities at a
low distortion level.
The distribution of the active areas
across the surface of the device gives
an excellent temperature profile.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
age
4
1
2
3
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
VCBO
VCEO
IC
Ptot
hFE
fT
GUM
Vo
collector-base voltage
open emitter
−
collector-emitter voltage open base
−
DC collector current
−
total power dissipation
up to Ts = 145 °C (note 1)
−
DC current gain
IC = 100 mA; VCE = 10 V; Tj = 25 °C 80
transition frequency
IC = 100 mA; VCE = 10 V; f = 1 GHz; −
Tamb = 25 °C
maximum unilateral power IC = 100 mA; VCE = 10 V; f = 500 MHz; −
gain
Tamb = 25 °C
IC = 100 mA; VCE = 10 V; f = 800 MHz; −
Tamb = 25 °C
output voltage
dim = −60 dB; IC = 100 mA; VCE = 10 V; −
RL = 75 Ω; Tamb = 25 °C;
f(p+q−r) = 793.25 MHz
TYP.
−
−
−
−
130
7
16
12
850
MAX.
25
15
150
1
−
−
−
−
−
UNIT
V
V
mA
W
GHz
dB
dB
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
CONDITIONS
up to Ts = 145 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 13
2
MIN.
−
−
−
−
−
−65
−
MAX.
25
15
2
150
1
150
175
UNIT
V
V
V
mA
W
°C
°C
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