NZT6717 查看數據表（PDF） - Fairchild Semiconductor

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NZT6717

NPN General Purpose Amplifier

Fairchild Semiconductor 

TN6717A

NZT6717

C

C

BE

TO-226

SOT-223

E

C

B

NPN General Purpose Amplifier

This device is designed for general purpose medium power

amplifiers and switches requiring collector currents to 1.0 A.

Sourced from Process 39.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current - Continuous

TJ, Tstg

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

80

80

5.0

1.2

-55 to +150

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units

V

V

V

A

°C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

PD

Total Device Dissipation

Derate above 25°C

RθJC

Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction to Ambient

TN6717A

1.0

8.0

50

125

*NZT6717

1.0

8.0

125

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

Units

W

mW /°C

°C/W

°C/W

 1997 Fairchild Semiconductor Corporation

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